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Iridium (Ir) Coated Silicon Wafer is a precision-engineered silicon substrate coated with a thin iridium film using tightly controlled deposition processes. Stanford Electronics applies sputter deposition combined with SEM-based surface analysis to closely control film thickness, continuity, and uniformity. This production approach reduces oxidation and particulate contamination risks during high-temperature processing, ensuring the wafer consistently meets the performance requirements of semiconductor research and advanced process development.
Iridium (Ir) Coated Silicon Wafer consists of a silicon base coated with an ultra-thin iridium layer deposited using physical vapor deposition methods. The iridium film suppresses oxidation and metal diffusion during high-temperature fabrication steps, improving interface stability. Standard wafer geometry ensures compatibility with common semiconductor equipment, while the noble metal coating enhances reliability in demanding device manufacturing environments.
| Parameter | Value |
|---|---|
| Material | Iridium, Silicon |
| Purity | Ir: ≥99.9% |
| Form | Substrate |
| Dimensions | Dia.: 4 in × 0.525 mm |
| Silicon Specification | P-Type <100> |
| Adhesion Layer | Titanium (30 Å) |
| Ir Thickness | 1000 Å |
| Coating Area | Single size (or customized) |
The above product information is based on theoretical data and is for reference only. Actual specifications may vary.
Electronics and Semiconductor Processing
Used as a diffusion and oxidation barrier in CMOS fabrication, supporting stable performance during repeated thermal cycles.
Serves as a substrate for microelectronic sensors, where surface stability and low contamination are critical.
Research and Development
Applied in thin-film and interface studies, offering a uniform iridium surface for reproducible material analysis.
Utilized in materials science research to evaluate metal–silicon interactions relevant to next-generation device design.
Each wafer is individually sealed in anti-static packaging and secured in rigid foam carriers to protect against mechanical impact and particle contamination. Storage is maintained under controlled temperature and humidity conditions to preserve coating quality. Customized packaging formats, labeling, and handling solutions are available to support specific process or logistics requirements.
Silicon wafers are the foundation of semiconductor manufacturing, and the addition of thin iridium coatings significantly enhances their performance in harsh processing environments. Iridium’s resistance to oxidation and diffusion makes it particularly valuable for high-temperature and advanced-node applications. Stanford Electronics leverages modern sputter deposition technologies to deliver consistent film quality, supporting improved process reliability, device longevity, and scalable semiconductor fabrication.
| Parameter | Value |
|---|---|
| Material | Iridium, Silicon |
| Purity | Ir: ≥99.9% |
| Form | Substrate |
| Dimensions | Dia.: 4 in × 0.525 mm |
| Silicon Specification | P-Type <100> |
| Adhesion Layer | Titanium (30 Å) |
| Ir Thickness | 1000 Å |
| Coating Area | Single size (or customized) |
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