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Titanium Nitride (TiN) Coated Silicon Wafer features a uniformly deposited TiN thin film on high-quality silicon substrates using controlled sputter deposition. Stanford Electronics applies advanced surface metrology, including SEM analysis, to closely monitor film thickness and coating uniformity. This precision-driven process minimizes variability and ensures stable electrical and barrier performance, making the wafer well suited for demanding semiconductor fabrication and research applications.
Titanium Nitride (TiN) Coated Silicon Wafer consists of a silicon substrate coated with a dense, uniform TiN film using sputtering techniques. The TiN layer offers excellent electrical conductivity, chemical stability, and resistance to oxidation, serving as both a diffusion barrier and functional conductive layer. Controlled film thickness and homogeneity are critical for reducing defects and ensuring compatibility with standard semiconductor processing steps.
| Parameter | Value |
|---|---|
| Material | TiN, Silicon Wafer |
| Purity | TiN: ≥99.995% |
| Form | Substrate |
| Dimensions | Dia.: 4 inch × 0.525 mm |
| Adhesion Layer | None (available upon request) |
| TiN Thickness | 500 Å |
| Coating Area | Single size (or customized) |
The above product information is based on theoretical data and is for reference only. Actual specifications may vary.
Electronics and Semiconductor Manufacturing
Used as an interconnect or conductive layer in integrated circuits, leveraging TiN’s low resistivity and thermal stability.
Applied as a diffusion barrier in metal–silicon interfaces to prevent interdiffusion during high-temperature processing.
Surface Protection and Barrier Layers
Employed in MEMS devices as a protective coating to reduce oxidation and mechanical wear.
Utilized in sensor applications where TiN’s chemical inertness improves long-term stability and performance.
Wafers are packed in antistatic trays and sealed in moisture barrier bags to prevent contamination and mechanical damage. Storage in a clean, dry, and temperature-controlled environment is recommended to preserve TiN coating integrity. Customized packaging and handling solutions are available upon request.
Titanium Nitride is widely used in semiconductor manufacturing due to its unique combination of conductivity, chemical inertness, and thermal stability. Advances in thin-film deposition enable precise tuning of TiN properties, improving contact reliability and device performance. The integration of TiN coatings on silicon substrates highlights the importance of strict process control in modern microelectronics and advanced device fabrication.
|
Parameter |
Value |
|
Material |
TiN, Silicon Wafer |
|
Purity |
TiN: ≥99.995% |
|
Form |
Substrate |
|
Dimensions |
Dia.: 4 inch * 0.525 mm |
|
Adhesion Layer |
None (available upon request) |
|
TiN Thickness |
500 Å |
|
Coating Area |
Single Size (or customized) |
*The above product information is based on theoretical data and is for reference only. Actual specifications may vary.
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