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Bismuth Telluride (Bi2Te3) Highly Oriented Crystal Substrates have been widely used in the industry due to their unique physical and chemical properties. Stanford Electronics can offer a variety of sizes of Bismuth Telluride (Bi2Te3) Highly Oriented Crystal Substrates.
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Bismuth Telluride (Bi₂Te₃) Highly Oriented Crystal Substrates are widely used in thermoelectric applications due to their excellent electrical conductivity and low thermal conductivity. Stanford Electronics offers extensive expertise in the production of high-quality Bi₂Te₃ crystal substrates and provides a range of sizes to meet diverse research and development needs.
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Bismuth Telluride (Bi2Te3) Highly Oriented Crystal Substrates |
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Crystal Structure |
Hexagonal, group 166， R-3M |
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Grown Method |
High-pressure vertical Bridgman |
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Lattice constant |
a=4.38A c=30.5A |
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Surface |
as Cleavaged |
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Purity |
99.999%, atomic ratio |
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Melting Point |
585 oC |
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Resistivity |
0.1-5 mohm. cm |
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Mobility |
3000 cm2 / V.s |
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Packing |
packed in a plastic bag with a vacuum |
Bismuth Telluride (Bi₂Te₃) Highly Oriented Crystal Substrates are essential in the field of thermoelectric materials, where they serve as a benchmark compound for efficient energy conversion. Known for their ability to maintain high electrical conductivity while minimizing thermal conductivity, these substrates are widely used in thermoelectric generators, cooling modules, and research on low-dimensional quantum systems. Their well-aligned crystal structure makes them ideal for both experimental and practical applications in energy harvesting and solid-state refrigeration.
|
Bismuth Telluride (Bi2Te3) Highly Oriented Crystal Substrates |
|
|
Crystal Structure |
Hexagonal, group 166， R-3M |
|
Grown Method |
High-pressure vertical Bridgman |
|
Lattice constant |
a=4.38A c=30.5A |
|
Surface |
as Cleavaged |
|
Purity |
99.999%, atomic ratio |
|
Melting Point |
585 oC |
|
Resistivity |
0.1-5 mohm. cm |
|
Mobility |
3000 cm2 / V.s |
|
Packing |
packed in a plastic bag with a vacuum |
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