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CY2538 Bismuth Telluride (Bi2Te3) Highly Oriented Crystal Substrates

Catalog No
CY2538
Dimensions
irregular, about 5x5x0.1 mm, 10x10x0.1 mm
Material
Bi2Te3
Orientation
Highly oriented layer structure along <0001>
Growth Method
High-pressure vertical bridgman

Bismuth Telluride (Bi2Te3) Highly Oriented Crystal Substrates have been widely used in the industry due to their unique physical and chemical properties. Stanford Electronics can offer a variety of sizes of Bismuth Telluride (Bi2Te3) Highly Oriented Crystal Substrates.

Related products: LiAlO2 Crystal Substrate, LAST Crystal Substrate, LiF Crystal Substrate, NdGaO3 Crystal Substrate.

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Bismuth Telluride (Bi2Te3) Highly Oriented Crystal Substrates
Bismuth Telluride (Bi2Te3) Highly Oriented Crystal Substrates
Description
Specifications
Reviews
CY2538 Bismuth Telluride (Bi2Te3) Highly Oriented Crystal Substrates Description

Bismuth Telluride (Bi2Te3) Highly Oriented Crystal Substrates Description

Bismuth Telluride (Bi₂Te₃) Highly Oriented Crystal Substrates are widely used in thermoelectric applications due to their excellent electrical conductivity and low thermal conductivity. Stanford Electronics offers extensive expertise in the production of high-quality Bi₂Te₃ crystal substrates and provides a range of sizes to meet diverse research and development needs.

Bismuth Telluride (Bi2Te3) Highly Oriented Crystal Substrates Specifications

Bismuth Telluride (Bi2Te3) Highly Oriented Crystal Substrates

Crystal Structure

Hexagonal, group 166, R-3M

Grown Method

High-pressure vertical Bridgman

Lattice constant

  a=4.38A    c=30.5A

Surface

 as Cleavaged

Purity

99.999%, atomic ratio

Melting Point

585 oC

Resistivity 

   0.1-5 mohm. cm

Mobility

3000 cm2 / V.s 

Packing

packed in a plastic bag with a vacuum

 

Bismuth Telluride (Bi2Te3) Highly Oriented Crystal Substrates Applications

Bismuth Telluride (Bi₂Te₃) Highly Oriented Crystal Substrates are essential in the field of thermoelectric materials, where they serve as a benchmark compound for efficient energy conversion. Known for their ability to maintain high electrical conductivity while minimizing thermal conductivity, these substrates are widely used in thermoelectric generators, cooling modules, and research on low-dimensional quantum systems. Their well-aligned crystal structure makes them ideal for both experimental and practical applications in energy harvesting and solid-state refrigeration.

CY2538 Bismuth Telluride (Bi2Te3) Highly Oriented Crystal Substrates Specifications

Bismuth Telluride (Bi2Te3) Highly Oriented Crystal Substrates

Crystal Structure

Hexagonal, group 166, R-3M

Grown Method

High-pressure vertical Bridgman

Lattice constant

  a=4.38A    c=30.5A

Surface

 as Cleavaged

Purity

99.999%, atomic ratio

Melting Point

585 oC

Resistivity 

   0.1-5 mohm. cm

Mobility

3000 cm2 / V.s 

Packing

packed in a plastic bag with a vacuum

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