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Stanford Electronics offer single crystal GaAs wafer produced by two main growth techniques LEC and VGF method, allowing us to provide customers the widest choice of GaAs material with high uniformity of electrical properties and excellent surface quality.
Related products: Gallium Nitride Wafer, Sapphire Wafer, Silicon Carbide Wafer, Silicon Wafer, Germanium Wafer (Ge wafer).
GaAs offers excellent chemical stability, high hardness, and resistance to harsh environments. It is available as ingots and polished wafers in both conducting and semi-insulating types. Mechanical-grade and epi-ready wafers are also provided to meet various application needs.
|
Growth |
LEC / VGF |
|
Diameter |
Ø 2" / Ø 3" / Ø 4" |
|
Thickness |
350 um ~ 625 um |
|
Orientation |
<100> / <111> / <110> or others |
|
Conductivity |
P - type / N - type / Semi-insulating |
|
Dopant |
Zn / Si / undoped |
|
Surface |
One side polished or two sides polished |
|
Concentration |
1E17 ~ 5E19 cm-3 |
|
TTV |
<= 10 um |
|
Bow / Warp |
<= 20 um |
|
Grade |
Epi polished grade / mechanical grade |
- Light-emitting diodes
- Laser diodes
- Photovoltaic devices
- High Electron Mobility Transistor
- Heterojunction Bipolar Transistor
Related articles:
|
Growth |
LEC / VGF |
|
Diameter |
Ø 2" / Ø 3" / Ø 4" |
|
Thickness |
350 um ~ 625 um |
|
Orientation |
<100> / <111> / <110> or others |
|
Conductivity |
P - type / N - type / Semi-insulating |
|
Dopant |
Zn / Si / undoped |
|
Surface |
One side polished or two sides polished |
|
Concentration |
1E17 ~ 5E19 cm-3 |
|
TTV |
<= 10 um |
|
Bow / Warp |
<= 20 um |
|
Grade |
Epi polished grade / mechanical grade |
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