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Stanford Electronics provides a wide range of compound wafers including GaAs wafers, GaP wafers, GaSb wafers, InAs wafers, and InP wafers.
Related products: Gallium Nitride Wafer, Gallium Arsenide Wafer, Germanium Wafer (Ge wafer), Gallium Phosphide Wafer, Indium Arsenide Wafer.
Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from the III-V group used in infrared detectors, including thermal imaging cameras, FLIR systems, infrared homing missile guidance systems, and infrared astronomy. The indium antimonide detectors are sensitive between 1–5 µm wavelengths. Indium antimonide was a very common detector in the old, single-detector mechanically scanned thermal imaging systems. Another application is as a terahertz radiation source as it is a strong photo-Dember emitter.
|
Growth |
LEC |
|
Diameter |
Ø 2" / Ø 3" |
|
Thickness |
500 um - 625 um |
|
Orientation |
(100)+/- 0.5° |
|
Off orientation |
Off 2° to 10° |
|
Surface |
One side polished or two sides polished |
|
Flat options |
EJ or SEMI. Std. |
|
Mobility |
(5.0-3.5)E5 cm2/Vs |
|
EPD |
<= 200 cm-2 |
|
Grade |
Epi polished grade / mechanical grade |
|
Package |
Single wafer container |
- Solar photovoltaic
- Integrated circuits
- Transistor
|
Growth |
LEC |
|
Diameter |
Ø 2" / Ø 3" |
|
Thickness |
500 um - 625 um |
|
Orientation |
(100)+/- 0.5° |
|
Off orientation |
Off 2° to 10° |
|
Surface |
One side polished or two sides polished |
|
Flat options |
EJ or SEMI. Std. |
|
Mobility |
(5.0-3.5)E5 cm2/Vs |
|
EPD |
<= 200 cm-2 |
|
Grade |
Epi polished grade / mechanical grade |
|
Package |
Single wafer container |
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