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Stanford Electronics offers various grades of Indium phosphide Powder. SAM has a highly skilled R&D and engineering staff who have more than two decades’ knowledge in indium metallurgy and its applications.
Related Products: Indium Chloride Powder, Indium Hydroxide Powder, Indium Oxide Powder, Indium Sulfate Powder.
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic crystal structure, identical to that of GaAs and most of the III-V semiconductors.
|
CAS Number |
22398-80-7 |
|
Molecular formula |
InP |
|
Molecular weight |
145.79 |
|
Appearance |
Black cubic crystals |
|
Density |
4.81 g/cm3 |
|
Melting point |
1062 °C |
|
Solubility |
Slightly soluble in acids |
InP is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.
It was used with indium gallium arsenide to make a record breaking pseudomorphic heterojunction bipolar transistor that could operate at 604 GHz.
|
Symbol |
|
|
Signal word |
Danger |
|
Hazard statements |
H350-H361f-H372 |
|
Precautionary statements |
P201-P281-P308 + P313 |
|
RIDADR |
NONH for all modes of transport |
|
CAS Number |
22398-80-7 |
|
Molecular formula |
InP |
|
Molecular weight |
145.79 |
|
Appearance |
Black cubic crystals |
|
Density |
4.81 g/cm3 |
|
Melting point |
1062 °C |
|
Solubility |
Slightly soluble in acids |
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