Piezoelectric PZT Ceramic Substrates feature low voltage actuation with high piezoelectric constant, high coercive electric field to mitigate piezoelectrical deterioration during high voltage actuation, and excellent machinability. Stanford Electronics has rich experience in supplying high-quality ceramic products.
Related products: Aluminum Oxide Sapphire Crystal Substrate, Aluminum Nitride Substrates, Beryllium Oxide Ceramic Substrates
MAX size: 120 × 90
MIN size: 30 × 30
Thickness: 0.1 - 9.0
*Please contact us for more details
Item |
Unit |
PZ0750 |
PZ0801 |
Bulk Density |
- |
7.9 |
7.9 |
Piezoelectric Constant (d15) |
10^(-12)m/V |
750 |
900 |
Piezoelectric Constant (d31) |
10^(-12)m/V |
-230 |
-190 |
Piezoelectric Constant (d33) |
10^(-12)m/V |
450 |
400 |
Dielectric Constant (ε11T/ε0) |
- |
2400 |
3000 |
Dielectric Constant (ε33T/ε0) |
- |
1950 |
2280 |
Curie Temperature |
℃ |
310 |
260 |
Coercive Electric Field |
V/mm |
1100 |
970 |
Our Piezoelectric PZT Ceramic Substrates are carefully handled during storage and transportation to preserve the quality of our product in its original condition.
Item |
Unit |
PZ0750 |
PZ0801 |
Bulk Density |
- |
7.9 |
7.9 |
Piezoelectric Constant (d15) |
10^(-12)m/V |
750 |
900 |
Piezoelectric Constant (d31) |
10^(-12)m/V |
-230 |
-190 |
Piezoelectric Constant (d33) |
10^(-12)m/V |
450 |
400 |
Dielectric Constant (ε11T/ε0) |
- |
2400 |
3000 |
Dielectric Constant (ε33T/ε0) |
- |
1950 |
2280 |
Curie Temperature |
℃ |
310 |
260 |
Coercive Electric Field |
V/mm |
1100 |
970 |
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