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SC0896 Silicon Carbide Plate (SiC Plate)

Catalog No
SC0896
Material
SiC Ceramic
Density
3.05~3.15 g/cm3
Melting Point
2,830 °C
Purity
97%~99%

Silicon Carbide Plate is on sale at Stanford Electronics . As a leading manufacturer and supplier of Silicon Carbide products across the world, SAM offers customers high-quality SiC plates with high purity at competitive prices. Customization is available upon request.

Related products: Silicon Carbide Tube, Silicon Carbide Nozzle, Silicon Carbide Ball, visit more>>

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Silicon Carbide Plate (SiC Plate)
Silicon Carbide Plate (SiC Plate)
Silicon Carbide Plate (SiC Plate)
Silicon Carbide Plate (SiC Plate)
Description
Specifications
Videos
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SC0896 Silicon Carbide Plate (SiC Plate) Description

Silicon Carbide Plate Description

Silicon carbide (SiC) is a lightweight ceramic material with high strength properties comparable to diamond. Silicon Carbide Plate has excellent thermal conductivity, low thermal expansion, and is resistant to corrosion from acids. Silicon carbide ceramic is an excellent ceramic material for applications requiring good erosion and abrasive resistance. Consequently, it is useful in a variety of applications including spray nozzles, shot blast nozzles and cyclone components.

We produce sintered SiC plates, reaction bonded SiC plates and recrystallized SiC plates. Our recrystallized SiC products have high purity, while our reaction bonded and sintered silicon carbide plates have high mechanical strength.

Silicon Carbide Plate Silicon Carbide Plate

Silicon Carbide Plate Specifications

  Recrystallized SiC Sintered SiC Reaction Bonded SiC
Purity of Silicon Carbide 99.5% 98% > 88%
Max. Working Temp. (`C) 1650 1550 1300
Bulk Density (g/cm3) 2.7 3.1 > 3
Appearance Porosity < 15% 2.5 0.1
Flexural strength (MPa) 110 400 380
Compressive strength (MPa) > 300 2200 2100
Thermal expansion (10^-6/`C) 4.6 (1200℃) 4.0 (< 500℃) 4.4 (< 500℃)
Thermal conductivity (W/m.K) 35~36 110 65
Main characteristics High temp. High resistance.
High purity
Fracture Toughness Chemical Resistance

Silicon Carbide Plate Applications

Silicon Carbide Plate Packaging

Our silicon carbide plates are carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.

SC0896 Silicon Carbide Plate (SiC Plate) Specifications
  Recrystallized SiC Sintered SiC Reaction Bonded SiC
Purity of Silicon Carbide 99.5% 98% > 88%
Max. Working Temp. (`C) 1650 1550 1300
Bulk Density (g/cm3) 2.7 3.1 > 3
Appearance Porosity < 15% 2.5 0.1
Flexural strength (MPa) 110 400 380
Compressive strength (MPa) > 300 2200 2100
Thermal expansion (10^-6/`C) 4.6 (1200℃) 4.0 (< 500℃) 4.4 (< 500℃)
Thermal conductivity (W/m.K) 35~36 110 65
Main characteristics High temp. High resistance.
High purity
Fracture Toughness Chemical Resistance
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