Silicon Carbide Plate is on sale at Stanford Electronics . As a leading manufacturer and supplier of Silicon Carbide products across the world, SAM offers customers high-quality SiC plates with high purity at competitive prices. Customization is available upon request.
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Silicon carbide (SiC) is a lightweight ceramic material with high strength properties comparable to diamond. Silicon Carbide Plate has excellent thermal conductivity, low thermal expansion, and is resistant to corrosion from acids. Silicon carbide ceramic is an excellent ceramic material for applications requiring good erosion and abrasive resistance. Consequently, it is useful in a variety of applications including spray nozzles, shot blast nozzles and cyclone components.
We produce sintered SiC plates, reaction bonded SiC plates and recrystallized SiC plates. Our recrystallized SiC products have high purity, while our reaction bonded and sintered silicon carbide plates have high mechanical strength.
Recrystallized SiC | Sintered SiC | Reaction Bonded SiC | |
Purity of Silicon Carbide | 99.5% | 98% | > 88% |
Max. Working Temp. (`C) | 1650 | 1550 | 1300 |
Bulk Density (g/cm3) | 2.7 | 3.1 | > 3 |
Appearance Porosity | < 15% | 2.5 | 0.1 |
Flexural strength (MPa) | 110 | 400 | 380 |
Compressive strength (MPa) | > 300 | 2200 | 2100 |
Thermal expansion (10^-6/`C) | 4.6 (1200℃) | 4.0 (< 500℃) | 4.4 (< 500℃) |
Thermal conductivity (W/m.K) | 35~36 | 110 | 65 |
Main characteristics | High temp. High resistance. High purity |
Fracture Toughness | Chemical Resistance |
Our silicon carbide plates are carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.
Recrystallized SiC | Sintered SiC | Reaction Bonded SiC | |
Purity of Silicon Carbide | 99.5% | 98% | > 88% |
Max. Working Temp. (`C) | 1650 | 1550 | 1300 |
Bulk Density (g/cm3) | 2.7 | 3.1 | > 3 |
Appearance Porosity | < 15% | 2.5 | 0.1 |
Flexural strength (MPa) | 110 | 400 | 380 |
Compressive strength (MPa) | > 300 | 2200 | 2100 |
Thermal expansion (10^-6/`C) | 4.6 (1200℃) | 4.0 (< 500℃) | 4.4 (< 500℃) |
Thermal conductivity (W/m.K) | 35~36 | 110 | 65 |
Main characteristics | High temp. High resistance. High purity |
Fracture Toughness | Chemical Resistance |
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