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SAM provides Zinc Oxide Wafer Substrates with a size of 10 x 10 x 0.5 mm, we always choose prime grade and defect-free wafer as a substrate for growing high uniformity thermal oxide layer to meet your specific requirements.
Related Products: Indium Antimonide Wafer, Silicon Carbide Wafer, Gallium Phosphide Wafer, Silicon Wafer, 1851 Germanium Wafer (Ge wafer).
With an ideal crystal structure and only 2% lattice mismatch to GaN, ZnO wafer substrates are better matched than sapphire or SiC, making them highly suitable for GaN epitaxial growth and wide bandgap semiconductor applications. Supplied in square, undoped 10 × 10 × 0.5 mm size with double-side polished <0001> orientation, these high-quality substrates are widely used in nitride-based device fabrication.
|
Chemical formula |
ZnO |
|
Crystal structure |
Hexagonal |
|
Lattice constant |
3.3 A |
|
Lattice mismatch with GaN in <0001> plane |
9 |
|
Thermal conductivity |
0.006 cal / cm /K |
|
Refractive index |
2.0681 / 2.0510 |
|
Identified polished face |
Zn-face/O-face |
- Semiconductor circuit substrate
- ZnO LED
- ZnO film
|
Chemical formula |
ZnO |
|
Crystal structure |
Hexagonal |
|
Lattice constant |
3.3 A |
|
Lattice mismatch with GaN in <0001> plane |
9 |
|
Thermal conductivity |
0.006 cal / cm /K |
|
Refractive index |
2.0681 / 2.0510 |
|
Identified polished face |
Zn-face/O-face |
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