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ZN2277 Zinc Oxide Wafers Substrates

Catalog No
ZN2277
Material
ZnO
Crystal Structure
Hexagonal
Refractive Index
2.0681/2.0510

SAM provides Zinc Oxide Wafer Substrates with a size of 10 x 10 x 0.5 mm, we always choose prime grade and defect-free wafer as a substrate for growing high uniformity thermal oxide layer to meet your specific requirements. 

Related Products: Indium Antimonide Wafer, Silicon Carbide Wafer, Gallium Phosphide Wafer, Silicon Wafer, 1851 Germanium Wafer (Ge wafer).

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Zinc Oxide Wafers Substrates
Zinc Oxide Wafers Substrates
Description
Specifications
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ZN2277 Zinc Oxide Wafers Substrates Description

Description of Zinc Oxide Wafers Substrates

With an ideal crystal structure and only 2% lattice mismatch to GaN, ZnO wafer substrates are better matched than sapphire or SiC, making them highly suitable for GaN epitaxial growth and wide bandgap semiconductor applications. Supplied in square, undoped 10 × 10 × 0.5 mm size with double-side polished <0001> orientation, these high-quality substrates are widely used in nitride-based device fabrication.

Specifications of Zinc Oxide Wafers Substrates

Chemical formula

ZnO

Crystal structure

Hexagonal

Lattice constant

3.3 A

Lattice mismatch with GaN in <0001> plane

9

Thermal conductivity

0.006 cal / cm /K

Refractive index

2.0681 / 2.0510

Identified polished face

Zn-face/O-face

 

Applications of Zinc Oxide Wafers Substrates

- Semiconductor circuit substrate
- ZnO LED
- ZnO film

ZN2277 Zinc Oxide Wafers Substrates Specifications

Chemical formula

ZnO

Crystal structure

Hexagonal

Lattice constant

3.3 A

Lattice mismatch with GaN in <0001> plane

9

Thermal conductivity

0.006 cal / cm /K

Refractive index

2.0681 / 2.0510

Identified polished face

Zn-face/O-face

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