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SD6706 Silicon Carbide (SiC) Schottky Diodes

Catalog No
SD6706
Material
SiC
Operating Temperature
-55℃ to 125℃
Dimensions
Depends on model

Stanford Electronics offers high-performance Silicon Carbide (SiC) Schottky Diodes engineered for superior efficiency, high voltage tolerance, and ultra-fast switching. Ideal for power electronics and renewable energy systems, these diodes ensure excellent thermal stability and long-term reliability in demanding environments.

Related Products: Low Forward Voltage Schottky Diodes, Miniature / SMD Schottky Diodes, Power Schottky Rectifiers

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SD6706 Silicon Carbide (SiC) Schottky Diodes
SD6706 Silicon Carbide (SiC) Schottky Diodes
Description
Specifications
Reviews
SD6706 Silicon Carbide (SiC) Schottky Diodes Description

Silicon Carbide (SiC) Schottky Diodes Specifications

Parameters

Type

VRRM

I(AV)

IFSM

VF

IR

Package

V

A

A

V

IF (A)

μA

VR (V)

SSC0665D

650

6

66

1.34

6

1.2

650

PDFN5*6

SSC0665-T

650

6

66

1.34

6

1.2

650

TO-220-2

Q-SSC0865-TF

650

16.1

42

1.4

10

1

650

TO-220F-2L

Q-SSC05120-T

1200

5

51

1.4

5

15

1200

TO-220AC

Q-SSC2090-T7

900

20

125

1.39

20

20

900

TO-247-2

*The above product information is based on theoretical data. For more models and detailed inquiries, please contact us.

Silicon Carbide (SiC) Schottky Diodes Description

Silicon Carbide (SiC) Schottky Diodes are next-generation power semiconductor devices engineered for high-efficiency, high-voltage applications. Unlike traditional silicon diodes, SiC Schottky diodes offer negligible reverse recovery losses, enabling ultra-fast switching and greater energy efficiency in power conversion systems.

These diodes are designed to handle high surge currents, operate at higher frequencies, and feature a positive temperature coefficient, improving thermal performance and reliability under demanding conditions. Additionally, they are halogen-free and RoHS compliant, making them an eco-friendly solution for a wide range of industrial, automotive, and renewable energy applications.

Silicon Carbide (SiC) Schottky Diodes Applications

Silicon Carbide (SiC) Schottky Diodes Packaging

Our products are packaged in customized cartons of various sizes based on the material dimensions. Small items are securely packed in PP boxes, while larger items are placed in custom wooden crates. We ensure strict adherence to packaging customization and the use of appropriate cushioning materials to provide optimal protection during transportation.

Packaging: Carton, Wooden Box, or Customized.

Kindly review the packaging details provided for your reference.

Silicon Carbide (SiC) Schottky Diodes FAQs

Q1: What are Silicon Carbide (SiC) Schottky Diodes?
A: SiC Schottky Diodes are high-performance diodes made from Silicon Carbide (SiC) material, offering low reverse recovery, high surge current handling, and improved thermal stability compared to traditional silicon diodes, making them ideal for high-efficiency, high-voltage applications.

Q2: What are the key advantages of SiC Schottky Diodes?
A: The main benefits include negligible reverse recovery, higher surge current capabilities, positive temperature coefficient, higher switching frequency, and RoHS compliance, all contributing to increased energy efficiency, reduced heat generation, and greater reliability in demanding applications.

Q3: What applications are SiC Schottky Diodes best suited for?
A: SiC Schottky Diodes are commonly used in power conversion systems, electric vehicles, renewable energy systems, motor drives, and uninterruptible power supplies (UPS), providing high efficiency and reliable performance in high-voltage, high-frequency environments.

Performance Comparison Table with Competitive Products

Feature

Silicon Carbide (SiC) Schottky Diodes

Standard Schottky Diodes

Forward Voltage Drop (VF)

Ultra-low (as low as 0.2V-0.4V)

Typically 0.3V-0.6V

Leakage Current (IR)

Very low, especially at high temperatures

Higher leakage, especially under thermal stress

Switching Speed

Fast to ultra-fast

Fast

Reverse Voltage Range

10V to 100V (varies by model)

Broad, often up to 150V

Thermal Performance

Excellent, with compact and thermally optimized designs

Varies by manufacturer and package

Package Options

Compact SMDs (SOD-323), etc.

Similar range, but often bulkier at same ratings

Application Fit

Optimized for portable, automotive, and LED circuits

General-purpose rectification

Price

Slightly higher, justified by performance and size

Generally lower for comparable ratings

SD6706 Silicon Carbide (SiC) Schottky Diodes Specifications

Parameters

Type

VRRM

I(AV)

IFSM

VF

IR

Package

V

A

A

V

IF (A)

μA

VR (V)

SSC0665D

650

6

66

1.34

6

1.2

650

PDFN5*6

SSC0665-T

650

6

66

1.34

6

1.2

650

TO-220-2

Q-SSC0865-TF

650

16.1

42

1.4

10

1

650

TO-220F-2L

Q-SSC05120-T

1200

5

51

1.4

5

15

1200

TO-220AC

Q-SSC2090-T7

900

20

125

1.39

20

20

900

TO-247-2

*The above product information is based on theoretical data. For more models and detailed inquiries, please contact us.

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